ACE160P17B

P-Channel Enhancement Mode Power MOSFE

VER 1.2

1

Description

⚫

High side switch for full bridge converter

⚫

DC/DC converter for LCD display

Features

⚫

⚫

⚫

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

Drain Current (Continuous)*C

-12

A

-10

Drain Current (Pulsed)*B

-30

A

Avalanche energy L=0.1mH

E

AS

23

mJ

Power Dissipation

50

W

Operating temperature / storage temperature

-55~175

°C

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t

≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Unit

Maximum Junction-to-Ambient*A

Steady State

R

thJA

50

°C/W

Maximum Junction-to-Case (Drain)*A

Steady State

R

thJC

3

Ordering information

ACE160P17B XX + H

YM：TO-252

Pb - free

Halogen - free