Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

32

-

V

△

BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃, ID=1mA

---

0.028

---

V/

℃

VGS(th)

Gate Threshold Voltage

1.0

1.6

2.5

V

RDS(on)

-

3.6

4.5

mΩ

RDS(on)

-

6.7

9.5

mΩ

IDSS

Zero Gate Voltage Drain Current

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

-

-

±100

nA

Input Capacitance

-

2100

-

pF

Coss

Output Capacitance

-

326

-

pF

Crss

Reverse Transfer Capacitance

-

282

-

pF

Total Gate Charge

-

45

-

nC

Gate-Source Charge

-

3

-

nC

Gate-Drain(“Miller”) Charge

-

15

-

nC

td(on)

Turn-on Delay Time

-

21

-

ns

Turn-on Rise Time

-

32

-

ns

td(off)

Turn-off Delay Time

-

59

-

ns

Turn-off Fall Time

-

34

-

ns

IS

-

-

90

A

ISM

-

-

360

A

VSD

Drain to Source Diode Forward Voltage

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

-

15

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

4

-

nC

4、The power dissipation is limited by 150℃ junction temperature

Notes:

1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2、The test condition is, VDD =15V, VG =10V, RG =25Ω, L=0.5mH, IAS =19.5A

3、The data tested by pulsed Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

1.0MHz

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

WSF30100D

N-Ch MOSFET

Page 2

www.winsok.tw

Rev 1: May.2020