QPA1022DEVB datasheet(2/17 Pages) QORVO

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QPA1022D

8.5 – 11 GHz 4 W GaN Power Amplifier

Data Sheet Rev B, Feb 2021 | Subject to change without notice

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Absolute Maximum Ratings

Parameter

Value / Range

Units

Drain Voltage (VD)

Gate Voltage Range (VG)

-5 to 0

Drain Current (ID)

600

Gate Current (IG)

Input Power (PIN), 3:1 VSWR, VD=22 V, IDQ=180 mA, 85 °C

dBm

Storage Temperature

-55 to +150

°C

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended

application of Absolute Maximum Rating conditions to the device may reduce device reliability.

Electrical Specifications

Test conditions unless otherwise noted: Temp = 25 °C, VD = 22 V, IDQ = 180 mA. Data de-embedded to the reference planes.

Parameter

Min

Typ

Max

Units

Operational Frequency

8.5

GHz

Output Power (Pulse and CW, PIN=12 dBm)

36.5

dBm

Power Added Efficiency (Pulse and CW, PIN= 12 dBm)

Large Signal Gain (Pulse and CW, PIN=12 dBm)

24.5

Small Signal Gain

Input Return Loss

Output Return Loss

Harmonic Suppression (CW @POUT = 36 dBm, 2f0)

dBc

POUT Temp. Coeff. (PIN = 12 dBm)

−0.001

dB/°C

Small Signal Gain Temp. Coefficient

−0.087

dB/°C

Note: For pulse power, Pulse Width = 100 uS, Duty Cycle = 10%

Recommended Operating Conditions

Parameter

Value / Range

Units

Drain Voltage (VD)

Drain Current (IDQ)

180

Operating Temperature

− 40 to + 85

°C

Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating

conditions.

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