QPB0218 datasheet(2/11 Pages) QORVO

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QPB0218

2 – 18 GHz Wideband GaN SSPA

Preliminary Data Sheet Rev. A, March 2021

- 2 of 11 -

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Absolute Maximum Ratings

Parameter

Value / Range

Prime Power (VDC)*

24 V

Drain Current (ID_DRIVE)

RF Input Power, max.

45 dBm

Storage Temperature

−40 to +85 °C

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions is

not implied.

* Rating for thermal reliability

Recommended Operating Conditions

Parameter

Value / Range

Drain Voltage (VD)

Quiescent Drain Current (IDQ)

27 A

Operating Drain Current (ID)

32 A

Operating Temperature**

−40 to +71 °C

Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all

recommended operating conditions.

** Refers to outside clamp surface temperature

Electrical Specifications

Test conditions unless otherwise noted: VD = 20 V, IDQ = 27 A, TCLAMP = 25 °C, CW Operation

Parameter

Min

Typ

Max

Units

Frequency

GHz

Saturated POUT, CW (PIN = 39 dBm)

51.8

dBm

Power-Added Efficiency, CW (PIN = 39 dBm)

22.6

Power Gain, CW (PIN = 39 dBm)

12.8

Small Signal Gain

≥ 17

Input Return Loss

≥ 8

Second Harmonic, CW (In band, PIN = 39 dBm)

≤ −17

dBc

Third Harmonic, CW (In band, PIN = 39 dBm)

≤ −11

dBc

Input RF Interface

SMA (F)

Output RF Interface

Type N (F)

Weight

– Amplifier Unit, Bias Card and Cable

18.2 (8.26)

lbs. (kg)

Dimensions

– Amplifier Unit (L) x (W) x (H)

3.4 x 3.4 x 11.1

inches

86.4 x 86.4 x 281.9

millimeters

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