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AN2145NFHP Datasheet(PDF) 3 Page - Panasonic Semiconductor

Part # AN2145NFHP
Description  CCD Video Camera Signal Processor ICs
PDF  6 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

AN2145NFHP Datasheet(HTML) 3 Page - Panasonic Semiconductor

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min
typ
max
Unit
Parameter
Condition
Symbol
Note A) Sine waves with BLK and pedestal
Note B) Sine waves with BLK
Note C) For the AN2147FHP, 450mVP-P min., 665mVP-P typ., and 880mVP-P max. under the conditions
V48=10STEP 200mVP-P and V50=10STEP 200mVP-P.
Note D) 90ns typ. for the AN2146FHP and the AN2147FHP
Note E) 6.0dB typ. for the AN2147FHP
The value in the above characteristics is not a guaranteed value, but reference one on design.
700
1150
1500
mVP–P
VCGC1
Color difference gain control characteristics (1)Note B)
V22=Sin500kHz 600mVP–P
–2
0
2
dB
VGAM4
Between channels
γ characteristics
V23=10STEP 500mVP–P
V24=10STEP 1V
700
1150
1500
mVP–P
VCGC2
Color difference gain control characteristics (2)Note B)
V23=Sin500kHz 600mVP–P
220
300
390
mVP–P
VIGAM1
Iris
γ characteristics (1)
V5=10STEP 1VP–P
3rd step
350
480
620
mVP–P
VIGAM2
Iris
γ characteristics (2)
V5=10STEP 1VP–P
5 step
470
630
800
mVP–P
VIGAM3
Iris
γ characteristics (3)
V5=10STEP 1VP–P
10 step
–20
0
20
mV
VYBLK
Luminance signal blanking level
V69=C–GND
–20
0
20
mV
VIBLK
Iris signal blanking level
V5=C–GND
–20
0
20
mV
VRBLK
R-Y blanking level
V22=C–GND
–20
0
20
mV
VBBLK
B-Y blanking level
V23=C–GND
–20
dB
VEDGE1
Edge suppression characteristics (1)Note B)
V22=Sin500kHz 600mVP–P
310
450
610
mVP–P
VVAP
VAP generation circuit gain Note C)
V54=10STEP 200mVP–P
V56=10STEP 200mVP–P
–20
dB
VEDGE2
Edge suppression characteristics (2)Note B)
V23=Sin500kHz 600mVP–P
510
720
930
mVP–P
VCGAM3
Color difference
γ characteristics (3)
V22=10STEP 500mVP–P
V24=10STEP 1VP–P
10 step
s Electrical Characteristics (cont.) (VCC=4.6V, Ta=25±2˚C)
350
mV
VHC
Luminance high-cut characteristics
V65=10STEP 1500mVP–P
6.9
dB
VAPY
AP mix circuit luminance amplification characteristics
V16=10STEP 300mVP–P
120
ns
VAPDL
Horizontal APDL group delay Note A, D)
V16=Sin3.5MHz 100mVP–P
3.4
dB
VAPHAP
Aperture mix circuit HAP gain Note B)
V13=Sin3.5MHz 600mVP–P
3.3
dB
VAPVAP
Aperture mix circuit VAP gain Note B, E)
V11=Sin500kHz 600mVP–P
–12
dB
VLLSP
Aperture suppression characteristics Note B)
V13=Sin3.5MHz 600mVP–P
515
mV
VWFADE
White fade characteristics
V16=Vref
0dB
VDLAMP1
Delay signal amp. gain (1)Note A)
V37=Sin500kHz 500mVP–P
(V38=0.5V)
0dB
VDLAMP2
Delay signal amp. gain (2)Note A)
V42=Sin500kHz 500mVP–P
(V41=0.5V)
8dB
VDLAMP3
Delay signal amp. gain (3)Note A)
V37=Sin500kHz 500mVP–P
(V38=3.0V)
8dB
VDLAMP4
Delay signal amp. gain (4)Note A)
V42=Sin500kHz 500mVP–P
(V41=3.0V)
–26
dB
VCHC
Color difference high-clip characteristics Note B)
V22=V23=Sin500kHz 600mVP–P
(V5=white)
–26
dB
VCFADE
Color difference fade characteristics Note B)
V22=V23=Sin500kHz 600mVP–P
–30
dB
VSHLPF
S/H LPF characteristics Note A)
V65=Sin3.5MHz 1500mVP–P
–26
dB
VCLPF
Color difference LPF characteristics Note B)
V22=V23=Sin3.5MHz 600mVP–P
0dB
VVLPF1
VAP LPF characteristics (1)Note A)
V48=V50=Sin500kHz 200mVP–P
–25
dB
VVLPF2
VAP LPF characteristics (2)Note A)
V48=V50=Sin3.5MHz 200mVP–P
–4
dB
VEHPF
Edge HPF characteristics Note A)
V54=V56=Sin500kHz 500mVP–P



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