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AN2145NFHP Datasheet(PDF) 3 Page - Panasonic Semiconductor |
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AN2145NFHP Datasheet(HTML) 3 Page - Panasonic Semiconductor |
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3 / 6 page ![]() min typ max Unit Parameter Condition Symbol Note A) Sine waves with BLK and pedestal Note B) Sine waves with BLK Note C) For the AN2147FHP, 450mVP-P min., 665mVP-P typ., and 880mVP-P max. under the conditions V48=10STEP 200mVP-P and V50=10STEP 200mVP-P. Note D) 90ns typ. for the AN2146FHP and the AN2147FHP Note E) 6.0dB typ. for the AN2147FHP The value in the above characteristics is not a guaranteed value, but reference one on design. 700 1150 1500 mVP–P VCGC1 Color difference gain control characteristics (1)Note B) V22=Sin500kHz 600mVP–P –2 0 2 dB VGAM4 Between channels γ characteristics V23=10STEP 500mVP–P V24=10STEP 1V 700 1150 1500 mVP–P VCGC2 Color difference gain control characteristics (2)Note B) V23=Sin500kHz 600mVP–P 220 300 390 mVP–P VIGAM1 Iris γ characteristics (1) V5=10STEP 1VP–P 3rd step 350 480 620 mVP–P VIGAM2 Iris γ characteristics (2) V5=10STEP 1VP–P 5 step 470 630 800 mVP–P VIGAM3 Iris γ characteristics (3) V5=10STEP 1VP–P 10 step –20 0 20 mV VYBLK Luminance signal blanking level V69=C–GND –20 0 20 mV VIBLK Iris signal blanking level V5=C–GND –20 0 20 mV VRBLK R-Y blanking level V22=C–GND –20 0 20 mV VBBLK B-Y blanking level V23=C–GND –20 dB VEDGE1 Edge suppression characteristics (1)Note B) V22=Sin500kHz 600mVP–P 310 450 610 mVP–P VVAP VAP generation circuit gain Note C) V54=10STEP 200mVP–P V56=10STEP 200mVP–P –20 dB VEDGE2 Edge suppression characteristics (2)Note B) V23=Sin500kHz 600mVP–P 510 720 930 mVP–P VCGAM3 Color difference γ characteristics (3) V22=10STEP 500mVP–P V24=10STEP 1VP–P 10 step s Electrical Characteristics (cont.) (VCC=4.6V, Ta=25±2˚C) 350 mV VHC Luminance high-cut characteristics V65=10STEP 1500mVP–P 6.9 dB VAPY AP mix circuit luminance amplification characteristics V16=10STEP 300mVP–P 120 ns VAPDL Horizontal APDL group delay Note A, D) V16=Sin3.5MHz 100mVP–P 3.4 dB VAPHAP Aperture mix circuit HAP gain Note B) V13=Sin3.5MHz 600mVP–P 3.3 dB VAPVAP Aperture mix circuit VAP gain Note B, E) V11=Sin500kHz 600mVP–P –12 dB VLLSP Aperture suppression characteristics Note B) V13=Sin3.5MHz 600mVP–P 515 mV VWFADE White fade characteristics V16=Vref 0dB VDLAMP1 Delay signal amp. gain (1)Note A) V37=Sin500kHz 500mVP–P (V38=0.5V) 0dB VDLAMP2 Delay signal amp. gain (2)Note A) V42=Sin500kHz 500mVP–P (V41=0.5V) 8dB VDLAMP3 Delay signal amp. gain (3)Note A) V37=Sin500kHz 500mVP–P (V38=3.0V) 8dB VDLAMP4 Delay signal amp. gain (4)Note A) V42=Sin500kHz 500mVP–P (V41=3.0V) –26 dB VCHC Color difference high-clip characteristics Note B) V22=V23=Sin500kHz 600mVP–P (V5=white) –26 dB VCFADE Color difference fade characteristics Note B) V22=V23=Sin500kHz 600mVP–P –30 dB VSHLPF S/H LPF characteristics Note A) V65=Sin3.5MHz 1500mVP–P –26 dB VCLPF Color difference LPF characteristics Note B) V22=V23=Sin3.5MHz 600mVP–P 0dB VVLPF1 VAP LPF characteristics (1)Note A) V48=V50=Sin500kHz 200mVP–P –25 dB VVLPF2 VAP LPF characteristics (2)Note A) V48=V50=Sin3.5MHz 200mVP–P –4 dB VEHPF Edge HPF characteristics Note A) V54=V56=Sin500kHz 500mVP–P |
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