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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 19 May 2005

3 of 12

Philips Semiconductors

PMWD26UN

Dual N-channel

µTrenchMOS ultra low level FET

Fig 1.

Normalized total power dissipation as a

function of solder point temperature

Fig 2.

Normalized continuous drain current as a

function of solder point temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03aa17

0

40

80

120

0

50

100

150

200

°C)

(%)

03aa25

0

40

80

120

0

50

100

150

200

°C)

(%)

P

der

P

tot

P

tot 25 C

°

()

------------------------

100 %

×

=

I

der

I

D

I

D25 C

°

()

---------------------

100 %

×

=

003aaa266

10

-2

10

-1

1

10

10

2

10

-1

1

10

10

2

(A)

DC

100 ms

1 ms

100

µs

10 ms