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VTO39 Datasheet(PDF) 1 Page - IXYS Corporation |
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VTO39 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2003 IXYS All rights reserved 1 - 2 VTO 39 V RSM V RRM Type V DSM V DRM V V 700 600 VTO 39-06ho7 900 800 VTO 39-08ho7 1300 1200 VTO 39-12ho7 Three Phase Rectifier Bridge I dAV = 39 A V RRM = 600-1200 V F A HJ M BE G N L I Features • Package with DCB ceramic base plate • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Small and light weight Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated. ① for resistive load at bridge output. Symbol Conditions Maximum Ratings I dAV ① T C = 85°C, module 39 A I TAVM T C = 85°C; (180° sine ; per thyristor) 16 A I TSM T VJ = 45°C; t = 10 ms (50 Hz), sine 200 A V R = 0 t = 8.3 ms (60 Hz), sine 210 A T VJ = TVJM t = 10 ms (50 Hz), sine 180 A V R = 0 t = 8.3 ms (60 Hz), sine 190 A I2t T VJ = 45°C t = 10 ms (50 Hz), sine 200 A2s V R = 0 t = 8.3 ms (60 Hz), sine 150 A2s T VJ = TVJM t = 10 ms (50 Hz), sine 160 A2s V R = 0 t = 8.3 ms (60 Hz), sine 150 A2s (di/dt) cr T VJ = TVJM repetitive, I T = 20 A 100 A/µs f = 50Hz, t P = 200µs V D = 2/ 3 VDRM I G = 0.15 A non repetitive, I T = ITAVM 500 A/µs di G/dt = 0.15 A/µs (dv/dt) cr T VJ = TVJM;VDR = 2/ 3 VDRM 500 V/µs R GK = ∞; method 1 (linear voltage rise) V RGM 10 V P GM T VJ = TVJM t p = 30 µs ≤ 5W I T = ITAVM t p = 300 µs ≤ 2.5 W P GAVM 0.5 W T VJ -40...+125 °C T VJM 125 °C T stg -40...+125 °C V ISOL 50/60 Hz, RMS t = 1 min 2500 V~ I ISOL ≤ 1 mA t = 1 s 3000 V~ M d Mounting torque (M4) 1.5 - 2 Nm 14 - 18 lb.in. Weight typ. 18 g Priliminary data IXYS reserves the right to change limits, test conditions and dimensions. E72873 |
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