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3DD1555 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 3DD1555
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DD1555 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
3DD1555
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min.)
·
DC Current Gain-
: hFE≥ 8@IC= 1A
·
Collector-Emitter Saturation Voltage-
: VCE(sat)≤ 5.0V@ IC= 4A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
··
Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=75℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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