GaAs, HBT, MMIC, Low Phase Noise

Amplifier, 6 GHz to 14 GHz

Data Sheet

ADL8150ACHIP

Rev. 0

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FEATURES

Output P1dB: 19 dBm (typical at 7 GHz to 11 GHz)

Gain: 13 dB (typical at 7 GHz to 11 GHz)

Output IP3: 31.5 dBm (typical at 7 GHz to 11 GHz)

Phase noise: −172 dBc/Hz at 10 kHz offset

Die size: 1.490 mm × 0.930 mm × 0.102 mm

APPLICATIONS

Military and space

Test instrumentation

FUNCTIONAL BLOCK DIAGRAM

1

2

ADL8150ACHIP

RFIN

Figure 1.

GENERAL DESCRIPTION

The ADL8150ACHIP is a self biased, gallium arsenide (GaAs),

monolithic microwave integrated circuit (MMIC), heterojunction

bipolar transistor (HBT), low phase noise amplifier that operates

from 6 GHz to 14 GHz. The amplifier provides 13 dB of gain,

19 dBm output power for 1 dB gain compression (P1dB), and

an output third-order intercept (IP3) of 31.5 dBm at 7 GHz to

11 GHz. The amplifier requires 76 mA of quiescent collector

ADL8150ACHIP also features inputs and outputs (I/Os) that are

internally matched to 50 Ω and facilitates integration into

multichip modules (MCMs). All data is taken with the chip

connected via two wire bonds that are 0.025 mm (1 mil) wide and

0.31 mm (12 mil) long.