FDMA1032CZ

20V Complementary PowerTrench MOSFET

General Description

This device is designed specifically as a single package

solution for a DC/DC 'Switching' MOSFET in cellular

handset

and

other

ultra-portable

applications.

It

features an independent N-Channel & P-Channel

MOSFET with low on-state resistance for minimum

conduction losses. The gate charge of each MOSFET

is also minimized to allow high frequency switching

directly from the controlling device. The MicroFET 2x2

package offers exceptional thermal performance for its

physical size and is well suited to switching applications.

Features

Q1: N-Channel

3.7 A, 20V.

Q2: P-Channel

Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

RoHS Compliant

3

2

1

4

5

6

Absolute Maximum Ratings

Symbol

Parameter

Q1

Q2

Units

Drain-Source Voltage

20

–20

V

Gate-Source Voltage

12

±12

V

Drain Current

– Continuous

(Note 1a)

3.7

–3.1

– Pulsed

6

–6

A

Power Dissipation for Single Operation

(Note 1a)

1.4

(Note 1b)

0.7

W

Operating and Storage Junction Temperature Range

–55 to +150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

86 (Single Operation)

Thermal Resistance, Junction-to-Ambient

(Note 1b)

173 (Single Operation)

Thermal Resistance, Junction-to-Ambient

(Note 1c)

69 (Dual Operation)

Thermal Resistance, Junction-to-Ambient

(Note 1d)

151 (Dual Operation)

C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

032

FDMA1032CZ

7’’

8mm

3000 units

MicroFET 2x2

PIN 1

S1 G1

D2

D1 G2 S2

D1

D2

S1

G1

D1

S2

G2

D2

Free from halogenated compounds and antimony

oxides

HBM ESD protection level > 2 kV (Note 3)

Publication Order Number:

FDMA1032CZ/D

20

10 Semiconductor Components Industries, LLC.

October-2017, Rev. 2