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AND8308D Datasheet(PDF) 2 Page - ON Semiconductor |
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AND8308D Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() © Semiconductor Components Industries, LLC, 2008 December, 2016 − Rev. 2 1 Publication Order Number: AND8308/D AND8308/D Interpretation of Datasheet Parameters for ESD Devices Introduction Electrostatic Discharge (ESD) protection devices play an important role in protecting electronic products from surges and ESD events. The selection of the proper ESD device for a given application requires an understanding of both the system that needs protection as well as an understanding of the properties of the ESD diode. The ESD device must not disrupt the functionality of the system it is protecting during normal operation but also must react quickly to shunt dangerous current and voltage spikes to ground during surge and ESD events. This application note will define the parameters that can be found on ESD/TVS protection diodes’ datasheets and explain the relevance of each parameter. DC Parameters The key DC parameters of an ESD diode are presented below. A typical IV characteristic curve for a unidirectional ESD diode is shown in Figure 1. Figure 1. Unidirectional IV Characteristic Curve of an ESD and TVS VBR = Breakdown Voltage @ IT VRWM = Reverse Working Voltage @ IR (VRWM (typ) = 0.8 x VBR) IT = Test Current IPP = Maximum Reverse Peak Pulse Current (Typically Specified with either the 8x20 ms or 10x1000 ms Surge Pulse) VC = Clamping Voltage @ IPP VC VBR VRWM V I IPP IT IR Reverse Working Voltage, VRWM: Maximum nominal working voltage for which the ESD device is intended for use. At this voltage, the ESD diode will appear in the “off” state as a high impedance element that will have very low leakage current. The VRWM is below the reverse breakdown voltage, VBR. Reverse Breakdown Voltage, VBR: At this voltage, the ESD diode starts to conduct, or turn “on”. The breakdown is measured at a test current, IT, typically from 1mA to 10 mA. VBR is specified as a minimum value for ESD applications and usually is 10% to 15% above the VRWM. When selecting an ESD protection diode a designer must ensure that this voltage is higher than the maximum working voltage of the system it is protecting. Forward Voltage, VF: Voltage in the forward direction at the test current, IF. Capacitance, C: Capacitance is a parameter that becomes a concern for applications that operate at high data rates. High capacitance will degrade signals, compromising high speed applications. A device with low capacitance is preferred for high speed applications. HDMI and USB connections are examples of high speed applications where low capacitance is needed. ESD and Surge Parameters Interpretation of clamping specs during ESD or transient events is commonly misunderstood on ESD protection datasheets. There is no industry recognized standard for specifying clamping performance of ESD protection diodes and it is highly dependant on the testing conditions and input waveforms. Survivability Specs Peak Pulse Current, IPP: Maximum surge current which the device can withstand without damage. Most low power TVS diodes are specified with the 8 ms x 20 ms current surge pulse. Higher power TVS diodes are measured with the 10 ms x 1000 ms current surge pulse. See Figures 2 and 3 for definitions of these waveforms. This parameter plays an important role to determine the robustness for high power transient voltage suppression (TVS) applications such as lightning or inductive switching applications, but is not as crucial for applications that are predominantly concerned with ESD events such as portables applications. APPLICATION NOTE www.onsemi.com |
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