STTH1003S datasheet(2/7 Pages) STMICROELECTRONICS

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STTH1003S

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Table 4:Thermal Parameters

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.86 x IF(AV) + 0.024 IF

(RMS)

Table 6: Recovery Characteristics

Symbol

Parameter

Package

Value

Unit

Rth(j-c)

Junction to case

DPAK

°C/W

D2PAK

TO220FP

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

VR = VRRM

µA

Tj = 125°C

100

VF **

Forward voltage drop

Tj = 25°C

IF = 10A

1.30

Tj = 125°C

0.9

1.1

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery time

Tj = 25°C

IF = 0.5A

Irr = 0.25A

IR = 1A

IF = 1A

VR = 30V

dIF/dt = -50 A/µs

tfr

Forward recovery time

Tj = 25°C

IF = 10A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

200

IRM

Reverse recovery current

Tj = 125°C

IF = 10A

VCC = 200V

dIF/dt = 200 A/µs

5.7

7.5

Sfactor

Softness factor

0.3

VFP

Peak forward voltage

Tj = 25°C

IF = 10A

dIF/dt = 100 A/µs

2.5

3.5

Figure 1: Forward voltage drop versus current

(maximum values)

Figure 2: Peak reverse recovery current versus

dIF/dt (90% confidence)

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

0.1

1.0

10.0

100.0

(A)

(V)

T =125°C

T =25°C

T =75°C

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

V =200V

T =125°C

I = 2xI

FF(AV)

I= I

FF(AV)

I = 0.5xI

FF(AV)

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