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ISCNL313N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNL313N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNL313N DESCRIPTION · Drain Current : ID=60A@ TC=25℃ · Drain Source Voltage- : VDSS=60V(Min) · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 60 A IDM Drain Current-Single Pluse 240 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.833 ℃ /W |
Similar Part No. - ISCNL313N |
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Similar Description - ISCNL313N |
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