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ESDA6V1B1RL Datasheet(PDF) 4 Page - STMicroelectronics |
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ESDA6V1B1RL Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 6 page ![]() 0 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ppp[Tj initial]/Ppp[Tj initial=25°C] Tj initial(°C) Fig. 1 : Peak power dissipation versus initial junction temperature. 0 5 10 15 20 25 30 35 40 45 50 0.1 1.0 10.0 50.0 Ipp(A) tp=2.5µs Vcl(V) Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs. 1 10 100 10 100 1000 2000 Ppp(W) tp(µs) Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25 °C). 12 3 4 6 5 25 30 35 40 45 50 C(pF) F=1MHz Vosc=30mV VR(V) Fig. 4 : Capacitance versus reverse applied voltage (typical values). 25 50 75 100 125 150 1.0 1.2 1.4 1.6 1.8 2.0 2.2 IR[Tj] / IR[Tj=25°C] Tj(°C) Fig. 5 : Relative variation of leakage current versus junction temperature (typical values). ESDA6V1B1 4/6 |
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