VITESSE

SEMICONDUCTOR CORPORATION

Data Sheet

VSC7810

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Page 2

G52145-0, Rev 4.1

04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Notes: (1) Specified over 0°C (ambient) to 70°C (case). (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in

Application Note 48. (4) P = Incident Optical Power (5) See Note 2 in Application Note 48.

Symbol

Parameter

Min

Max

Units

Conditions

Supply Voltage

4.5

5.0

5.5

V

Supply Current

13

26

40

mA

PSRR

Power Supply Rejection Ratio

35

-

-

dB

Frequencies up to 40MHz

(includes external filter).

λ

Wavelength

700

840

850

nm

Low Frequency Cutoff

-

-

1.8

MHz

BW

Optical Modulation Bandwidth

800

1200

1300

MHz

S

Sensitivity

-22

-25

-27

dBm

Single-Ended Output Impedance

25

-

60

Ω

Differential Output Voltage

0.35

0.52

0.65

V

P = -4.5dBm,

Differential Responsivity

0.8

2.2

-

mV/

µW

P = -15dBm @ 50MHz

Output Bias Voltage

1.2

1.5

2.5

V

∆V

DC

Bias Offset Voltage

-

40

150

mV

Input Noise Equivalent Power

0.35

0.45

0.93

Output Noise Voltage

0.55

0.66

0.75

mV rms

DCD

Duty Cycle Distortion

-

1.5

4.5

%

P = -4.5dBm

Output Drive Current

2.5

-

8

mA

PDJ

Pattern Dependent Jitter

20

40

60

ps

P = -4.5dBm

+/-10% Voltage Window

Optically Active Area

-

100

-

µm

Diameter

PPJ

PP Jitter

120

160

200

ps

P = -5dBm

Rise Time

310

355

400

ps

20%-80% P = -4.5dBm

Fall Time

280

325

370

ps

20%-80% P = -4.5dBm