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BAV99S Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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BAV99S Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page ![]() BAV99S Rev : www.leiditech.com 01.09.2021 1/3 Dimensions SOT-363 Pin Configuration HIGH-SPEED SWITCHING DIODE FEATURES Small Plastic Package High Switching Speed Low Capacitance Two Electrically Isolated Series Configuration Arrays MARKING: K1 MAXIMUM RATINGS @( Ta=25℃ unless otherwise noted ) Symbol Parameter Limits Unit VRRM Repetitive Peak Reverse Voltage 85 V VR Reverse Voltage 75 V IF Forward Current 150 IFRM Repetitive Peak Forward Current 450 mA 2.5 IFSM A PD Power Dissipation 200 mW RΘJA Thermal Resistance from Junction to Ambient 625 ℃/W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ℃ Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=100μA 75 V Reverse current IR VR=75V 1 μA IF=1mA 0.715 IF=10mA 0.855 IF=50mA 1 Forward voltage VF IF=150mA 1.25 V Total capacitance Ctot VR=0,f=1MHz 1.5 pF Reverse recovery time trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω 6 ns ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Non-Repetitive Peak Forward Surge Current @ t=8.3ms Soliddot = Pin1 indicate. K1 |
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