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MAX11190 Datasheet(PDF) 4 Page - Maxim Integrated Products

Part # MAX11190
Description  4-Channel, Dual, Simultaneous Sampling, 2.2V to 3.6V, 12-Bit, 3Msps SAR ADC in Tiny 3mm x 3mm TQFN Package
PDF  19 Pages
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Manufacturer  MAXIM [Maxim Integrated Products]
Direct Link  https://www.maximintegrated.com/en.html
Logo MAXIM - Maxim Integrated Products

MAX11190 Datasheet(HTML) 4 Page - Maxim Integrated Products

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MAX11190
4-Channel, Dual, Simultaneous Sampling,
2.2V to 3.6V, 12-Bit, 3Msps SAR ADC in Tiny
3mm x 3mm TQFN Package
www.maximintegrated.com
Maxim Integrated │ 4
Electrical Characteristics
(VDD = +2.2V to +3.6V, REFA = REFB = VDD, OVDD = VDD, unless otherwise noted. fSCLK = 48MHz, 3Msps, 50% duty cycle.
Reference pins are independent, CDOUTA/DOUTB = 10pF. TA = -40ºC to 125ºC, unless otherwise noted. Typical values are at
TA = +25ºC.) (Note 2)
VDD to GND .......................................................................-0.3V to +4V
AIN1A, AIN2A to GND....-0.3V to the lower of (VDD + 0.3V) and +4.0V
REFA, OVDD to GND ....-0.3V to the lower of (VDD + 0.3V) and +4.0V
AIN1B, AIN2B to GND....-0.3V to the lower of (VDD + 0.3V) and +4.0V
REFB to GND.................-0.3V to the lower of (VDD + 0.3V) and +4.0V
CS,SCLKtoGND..... -0.3V to the lower of (VOVDD + 0.3V) and +4.0V
CHSELtoGND ......... -0.3V to the lower of (VOVDD + 0.3V) and +4.0V
DOUTA to GND........... -0.3V to the lower of (VOVDD + 0.3V) and +4.0V
DOUTB to GND .......... -0.3V to the lower of (VOVDD + 0.3V) and +4.0V
Multilayer Board Max Power Dissipation (TA = +70ºC)
TQFN (derate 20.8mW/ºC above +70ºC)..................1667mW
Operating Temperature Range..........................-40ºC to +125ºC
Storage Temperature Range.............................-65ºC to +150ºC
LeadTemperature(soldering,10s) ................................. +300ºC
Soldering Temperature (reflow)....................................... +260ºC
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
TQFN
Junction-to-AmbientThermalResistance(θJA) ..........48°C/W
Junction-to-CaseThermalResistance(θJC)...............10°C/W
(Note 1)
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY
Resolution
12 bit
12
Bits
Integral Nonlinearity
INL
±1
LSB
Differential Nonlinearity
DNL
No missing codes over temperature
±1
LSB
Offset Error
±1
±4.0
LSB
Gain Error
Excluding offset and reference errors
±1
±4.0
LSB
Total Unadjusted Error
TUE
±1.5
LSB
Channel-to-Channel Offset Matching
±0.3
LSB
Channel-to-Channel Gain Matching
±0.3
LSB
DYNAMIC PERFORMANCE
Signal-to-Noise Plus Distortion
(Note 3)
SINAD
fIN = 1MHz
70
72
dB
Signal-to-Noise Ratio
SNR
fIN = 1MHz
70.5
72
dB
Total Harmonic Distortion
THD
fIN = 1MHz
-85
-75
dB
Spurious-Free Dynamic Range
SFDR
fIN = 1MHz
76
85
dB
Intermodulation Distortion
IMD
fIN1 = 1.0003MHz, fIN2 = 0.99955MHz
-84
dB
Full-Power Bandwidth
-3dB point
40
MHz
Full-LinearBandwidth
SINAD > 68dB
2.5
MHz
Small-Signal Bandwidth
45
MHz
Crosstalk
Channel to channel
-90
dB



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