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BUL3P5 Datasheet(PDF) 3 Page - STMicroelectronics |
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BUL3P5 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() BUL3P5 2 Electrical Characteristics 3/10 2 Electrical Characteristics Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = -500 V VCE = -500 V__ __TC = 125°C -0.1 -0.5 mA mA V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -10 mA -5 -10 V VCEO(sus) Note: 1 Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA -400 V VCE(sat) Note: 1 Collector-Emitter Saturation Voltage IC = -0.7 A __ _ IB = -0.1A IC = -1 A __ _ IB = -0.2 A -0.5 -0.5 V V VBE(sat) Note: 1 Base-Emitter Saturation Voltage IC = -0.5A ____ IB = -0.1 A IC = -1A _____ IB = -0.2 A IC = -2A _____ IB = -0.4 A -1.1 -1.2 -1.3 V V V hFE DC Current Gain IC = -10 mA __ VCE = -5 V IC = -0.7A _ __ VCE = -5 V IC = -2A_ VCE = -5 V 10 18 4 34 tr ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time IC = -0.7 A ___ VCC = -250 V IB1 = -0.14 A __ IB2 = 0.14 A Tp = 30 µs 100 2.4 80 ns µs ns ts tf INDUCTIVE LOAD Storage Time Fall Time IC = -1 A ____ IB1 = -0.2 A VBE(off) = 5 V Rbb = 0 Ω L = 1 mH Vclamp = 200 V 450 70 ns ns |
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