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MSC74012 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MSC74012 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 50 V BVEBO IC = 2.0 mA 3.0 V ICBO VCB = 28 V 0.5 mA hFE VCE = 5 V IC = 0.4 A 15 150 --- PG ηηηη C VCC = 28 V PIN = 0.85 W f = 1.5 - 1.7 GHz Pulse Width = 100 µS Duty Cycle = 10% 8.5 50 54 dB % NPN RF POWER TRANSISTOR MSC74012 DESCRIPTION: The ASI MSC74012 is a Common Base Device Designed for CW Applications in the 1.5 - 1.7 GHz bands. FEATURES INCLUDE: •••• Input/Output Matching • Gold Metallization • Hermetically Sealed Package •••• Emitter Ballasting MAXIMUM RATINGS IC 0.6 A VCBO 50 V PDISS 20 W @ TC = 25 OC TJ -55 OC to+200 OC TSTG -55 OC to+200 OC θθθθ JC 9.0 OC/W PACKAGE STYLE 400 2L FLG (E) 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER |
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Similar Description - MSC74012 |
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