TPCP8401

2002-09-09

1

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type

(P Channel U-MOSⅣ / N Channel U-MOSⅢ)

TPCP8401

Motor Dreive

Notebook PC

Portable Machines and Tools

S (typ.)

S (typ.)

• Low leakage current:

• Enhancement-mode

==== 25°C)

Rating

Characteristics

Symbol

P Channel N Channel

Unit

Drain-source voltage

−30

30

V

−30

30

V

Gate-source voltage

±20

±20

V

DC

(Note 1)

−3.5

4.5

Drain current

Pulse

(Note 1)

−14

18

A

Single-device operation

(Note 3a)

TBD

TBD

Drain power

dissipation

(t

= 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

TBD

TBD

Single-device operation

(Note 3a)

TBD

TBD

Drain power

dissipation

(t

= 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

TBD

TBD

W

Single pulse avalanche energy

2.0

(Note 4a)

3.3

(Note 4b)

mJ

Avalanche current

−1.75

2.25

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

TBD

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

5

6

8

7

Circuit

Configuration

ＪＥＤＥＣ

―

ＪＥＩＴＡ

―

TOSHIBA

―

2.9

±0.2

0.95

1

4

3

6

0.95

2.9±0.1

0.3 +0.1／−0.05

0.65

1111

4444

5555

8888

0.475

0.025 M A

A

0.8±0.05

S

0.05 S

1：SOURCE1 5：DRAIN2

2：GATE1

6：DRAIN2

3：SOURCE2 7：DRAIN1

4：GATE2

8：DRAIN1

1

2

3

4

8

7

6

5

Drain power

dissipation

(t

= 10s)

(Note 2a)

N-ch

P-ch

Preliminary