MIC5060

DS20006615A-page 4

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2021 Microchip Technology Inc. and its subsidiaries

Note 3

—

2.5

8.0

ms

V+ = 4.5V

reach V+ + 4V

—

90

140

µs

V+ = 12V

As above, measure time

4V

Note 3

—

6.0

30

µs

V+ = 4.5V

reach 1V

—

6.0

30

µs

V+ = 12V

As above, measure time

Overvoltage Shutdown

Threshold

35

37

41

V

—

—

values are characterized at 25°C and represent the most likely parametric norm.

2: “Asserted” refers to a logic high on the MIC5060.

3: Test conditions reflect worst-case high-side driver performance. Low-side and bootstrapped topologies are

significantly faster - see Applications Information.

ELECTRICAL CHARACTERISTICS (CONTINUED)

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

TEMPERATURE SPECIFICATIONS

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Storage Temperature Range

–65

—

+150

°C

—

Junction Temperature

—

—

+150

°C

Note 1

Ambient Temperature

–40

—

+85

°C

—

Lead Temperature

—

—

—

+260

°C

Soldering, 10 sec.

Package Thermal Resistances

Thermal Resistance, VDFN-8

—

60

—

°C/W —

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.