AF1333P

P-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Oct 15, 2004

2/5

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-550

-440

mA

-2.5

A

Total Power Dissipation

0.35

W

Linear Derating Factor

0.003

W/

Storage Temperature Range

-55 to +150

Operating Junction Temperature Range

-55 to +150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Max.

360

ºC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-20

-

-

V

Breakdown Voltage Temperature

Coefficient

Reference to 25

-

0.01

-

V/

-

-

600

-

-

800

Static Drain-Source

On-Resistance

-

-

1000

mΩ

Gate Threshold Voltage

-0.5

-

-1.2

V

Forward Transconductance

-

1

-

S

Drain-Source Leakage Current

-

-

-1

Drain-Source Leakage Current

-

-

-10

uA

Gate-Source Leakage

-

-

±100

nA

-

1.7

2.7

Gate-Source Charge

-

0.3

-

Gate-Drain (“Miller”) Charge

-

0.4

-

nC

-

5

-

Rise Time

-

8

-

Turn-Off Delay Time

-

10

-

Fall-Time

-

2

-

ns

Input Capacitance

-

66

105.6

Output Capacitance

-

25

-

Reverse Transfer Capacitance

f=1.0MHz

-

20

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-

-

-1.2

V

Note 1: Surface mounted on FR4 board, t ≤ 10 sec.

Note 2: Pulse width limited by Max. junction temperature.

Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.