IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 10 V; I

I

18

28

S

C

iss

15000

pF

C

oss

V

1400

pF

C

rss

340

pF

t

d(on)

81

ns

t

r

V

GS

= 10 V, V

82

ns

t

d(off)

R

G

= 1

Ω (External),

150

ns

t

f

40

ns

Q

g(on)

455

nC

Q

gs

V

GS

= 10 V, V

120

nC

Q

gd

185

nC

R

thJC

0.22

K/W

R

thCK

0.07

K/W

Source-Drain Diode

(T

Characteristic Values

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

36N100

36

A

34N100

34

A

I

SM

Repetitive;

36N100

144

A

pulse width limited by T

JM

34N100

136

A

V

SD

I

1.3

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

T

180

n s

T

30

n s

Q

RM

T

2

µC

I

RM

8

A

IXFE 36N100

IXFE 34N100

ISOPLUS-227 B

Please see IXFN36N100 data

sheet for characteristic curves.

Notes: 1. Pulse width limited by T

JM.

2. Pulse test, t

≤ 300 ms, duty cycle d ≤ 2%.

3. I

IXFE36N100: I

IXFE34N100: I