D452 datasheet(1/5 Pages) AOSMD

Part #	D452

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

14.2

20

39

50

RθJC

2.5

3

W

TA=70°C

2.1

Power Dissipation

A

TA=25°C

PDSM

3

Repetitive avalanche energy L=0.1mH

C

135

A

mJ

Junction and Storage Temperature Range

A

PD

°C

50

25

-55 to 175

TC=100°C

Avalanche Current

C

30

ID

55

100

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

Maximum

Units

Parameter

TC=25°C

TC=100°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

25

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

AOD452

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) =25V

ID = 55 A (VGS = 10V)

RDS(ON) < 8.5 mΩ (VGS = 10V)

RDS(ON) < 14 mΩ (VGS = 4.5V)

General Description

The AOD452 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard product AOD452 is Pb-free (meets ROHS &

Sony 259 specifications). AOD452L is a Green

Product ordering option. AOD452 and AOD452L are

electrically identical.

G

D

S

G

D

S

TO-252

D-PAK

Top View

Drain Connected to

Tab

Alpha & Omega Semiconductor, Ltd.

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