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STR2550 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # STR2550
Description  isc Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STR2550 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  STR2550 Datasheet HTML 1Page - Inchange Semiconductor Company Limited STR2550 Datasheet HTML 2Page - Inchange Semiconductor Company Limited STR2550 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistors
STR2550
DESCRIPTION
·
Collector-Emitter Saturation Voltage-
: VCE(sat) =- 0.2V(Max.)@IC=- 0.02A
·
Collector-Emitter Breakdown Voltage-
: V(BR) CEO= -500V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-500
V
VCEO
Collector-Emitter Voltage
-500
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-0.5
A
ICM
Collector Current-Pulse
-1.0
A
PC
Collector Power Dissipation
TC=25℃
0.5
W
Tj
Max.Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
250
℃
/W


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