STK850 datasheet(3/12 Pages) STMICROELECTRONICS

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STK850

Electrical characteristics

3/12

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3.

On/off states

Table 4.

Dynamic

Table 5.

Switching times

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA, VGS= 0

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating,Tc=125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 250µA

12.5

RDS(on)

Static Drain-Source On

Resistance

VGS= 10V, ID= 15A

VGS= 4.5V, ID= 15A

0.0024

0.0029

0.0035

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 5

Forward Transconductance

VDS =10V, ID = 15A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS =25V, f=1 MHz, VGS=0

3150

940

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=15V, ID = 30A

VGS =4.5V

(see Figure 14)

24.5

8.2

32.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD= 15V, ID= 15A,

RG=4.7Ω, VGS=4.5V

(see Figure 15)

td(off)

Turn-off Delay Time

Fall Time

VDD=15V, ID= 15A,

RG=4.7Ω, VGS=4.5V

(see Figure 15)

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