AO7413 datasheet(2/4 Pages) AOSMD

2 / 4 page

AO7413

Symbol

Min

Typ

Max

Units

BVDSS

-20

-0.5

TJ=55°C

-2.5

±1

µA

±10

µA

VGS(th)

-0.7

-0.9

-1.4

ID(ON)

-15

113

TJ=125°C

130

160

111

135

Ω

150

180

Ω

gFS

VSD

-0.84

-0.95

0.6

Ciss

512

620

Coss

Crss

9.2

Ω

4.9

Qgs

3.5

Qgd

3.7

tD(on)

810

tD(off)

trr

12.9

Qrr

3.9

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

On state drain current

VGS=-4.5V, VDS=-5V

Gate-Body leakage current

VDS=0V, VGS=±10V

VDS=0V, VGS=±12V

Gate Threshold Voltage

VDS=VGS ID=-250µA

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Gate Drain Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V, RL=7.1Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

VGS=-4.5V, VDS=-10V, ID=-1.4A

Gate Source Charge

Ω

VGS=-4.5V, ID=-1.3A

IS=-1A,VGS=0V

VDS=-5V, ID=-1.4A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IGSS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

VDS=-16V, VGS=0V

Zero Gate Voltage Drain Current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-1.4A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

VGS=-2.5V, ID=-1.1A

VGS=-10V, ID=-1.4A

Reverse Transfer Capacitance

IF=-1.4A, dI/dt=100A/µs

VGS=0V, VDS=-10V, f=1MHz

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev3: August 2005

Alpha & Omega Semiconductor, Ltd.

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