BSS138 datasheet(4/7 Pages) ONSEMI

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BSS138

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TYPICAL CHARACTERISTICS (continued)

Figure 3. On−Resistance Variation with Temperature

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

−50

−25

100

125

150

0.6

0.8

1.2

VGS, Gate To Source Voltage (V)

TJ, Junction Temperature (5C)

1.4

1.6

1.8

ID = 220 mA

VGS = 10 V

TA = 25°C

TA = 125°C

ID = 110 mA

0.5

1.1

1.7

2.3

2.9

3.5

4.1

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

0.5

1.5

2.5

3.5

0.1

0.2

VSD, Body Diode Forward Voltage (V)

VGS, Gate To Source Voltage (V)

0.3

0.4

0.5

0.6

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

TA = −55°C

25°C

125°C

VDS = 10 V

TA = 125°C

25°C

−55°C

VGS = 0 V

Figure 7. Gate Charge Characteristics

0.2

0.4

0.6

0.8

1.2

VSD, Drain To Source Voltage (V)

Qg, Gate Charge (nC)

100

010

1.4

1.6

1.8

ID = 220 mA

30 V

25 V

VDS = 8 V

CISS

COSS

CRSS

Figure 8. Capacitance Characteristics

1.2

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