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XP161A02A1PR Datasheet(PDF) 3 Page - Torex Semiconductor

Part # XP161A02A1PR
Description  N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
PDF  4 Pages
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Manufacturer  TOREX [Torex Semiconductor]
Direct Link  http://www.torex.co.jp
Logo TOREX - Torex Semiconductor

XP161A02A1PR Datasheet(HTML) 3 Page - Torex Semiconductor

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XP161A02A1PR
856
11
■Typical Performance Characteristics
0.3
0.1
0.2
0
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (
:)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse Test
Id＝3A
1.5A
1.5A,3A
4.5V
Vgs＝2.5V
1
0.5
0
-0.5
-1
-60
-30
0
30
60
90
120
150
Ambient Temp. Topr (
:)
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=10V, Id=1mA
9
6
3
0
012345
Drain-Source Voltage:Vds (V)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25
:
2V
2.5V
3V
3.5V
4V
5V
4.5V
Vgs＝1.5V
   
Topr＝25 ℃
125 ℃
-55 ℃
9
6
3
0
012345
Gate-Source Voltage:Vgs (V)
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=10V
0.2
0
0.05
0.15
0.1
0246
10
8
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25
:
3A
Id＝1.5A
1
0.01
0.1
0369
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25
:
Vgs＝2.5V
4.5V
11S_42XP161A02A1PR 02.9.12 4:16 PM ページ 856



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