1

Infrared Light Emitting Diodes

LN151L

Glass lens

1: Anode

2: Cathode

Unit : mm

Unit : mm

ø4.6

±0.15

Glass window

2.54

±0.25

ø5.75 max.

2-ø0.45

±0.05

1

2

LN151F

1: Anode

2: Cathode

ø4.6

±0.15

2.54

±0.25

ø5.75 max.

2-ø0.45

± 0.05

1

2

LN151F, LN151L

GaAs Infrared Light Emitting Diodes

For optical control systems

Features

Fast response and high-speed modulation capability :

Infrared light emission close to monochromatic light :

λ

Narrow directivity, suitable for effective use of radiant power

(LN151L)

Wide directivity, matched for external optical systems (LN151F)

TO-18 standard type package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

Power dissipation

160

mW

Forward current (DC)

100

mA

Pulse forward current

2A

Reverse voltage (DC)

3V

Operating ambient temperature

–25 to +100

˚C

Storage temperature

–30 to+100

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Radiant power

5

7.5

mW

Peak emission wavelength

λ

P

950

nm

Spectral half band width

∆λ

50

nm

Forward voltage (DC)

1.3

1.6

V

Reverse current (DC)

10

µA

Capacitance between pins

60

pF

Rise time

1

µs

Fall time

1

µs

Half-power angle

LN151F

θ

The angle in which radiant intencity is 50%

32

deg.

LN151L

8

deg.