2SC2873Y datasheet(2/4 Pages) AITSEMI

2 / 4 page

AiT Semiconductor Inc.

www.ait-ic.com

2SC2873Y

GENERAL PURPOSE TRANSISTOR

500mW 1.5A 32V TRANSISTOR

REV1.1

- NOV 2014 RELEASED, JUN 2016 UPDATED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

VCEO, Collector-Emitter Voltage(IB=0)

32V

VCBO, Collector-Base Voltage(IE=0)

40V

VEBO, Emitter-Base Voltage(IC=0)

IC, Collector Current

1.5A

PTOT, Total Device Dissipation(TA =25°C)NOTE1

500mW

TJM, Junction Temperature(Max)

150°C

TSTG, Storage Temperature

-55°C ~150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

NOTE1: Device mounted on a ceramic substrate

ELECTRICAL CHARACTERISTICS

TA=25°C

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Breakdown Voltage

V(BR)CEO

IC= 1mA, IB=0

V(BR)CBO

IC=50μA, IE=0

V(BR)EBO

IE=50μA,IC=0

Collector-Cutoff Current

ICBO

VCB=20V, IE=0

500

DC Current Gain

hFE

IC=100mA, VCE=3.0V

120

240

Collector- Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=50mA

0.50

Current Gain-Bandwidth Product

IC=50mA,VCE=5V

150

MHz

NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%.

2SC2873Y Datasheet(PDF) 2 Page - AiT Semiconductor Inc.

2SC2873Y Datasheet(HTML) 2 Page - AiT Semiconductor Inc.

Html Pages

1 2 3 4

Datasheet Download

Link URL