IRF740LC

www.vishay.com

Vishay Siliconix

S21-0853-Rev. C, 16-Aug-2021

2

Document Number: 91053

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

-62

°C/W

Case-to-sink, flat, greased surface

0.50

-

Maximum junction-to-case (drain)

-1.0

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

400

-

-

V

-

0.76

-

V/°C

Gate-source threshold voltage

2.0

-

4.0

V

Gate-source leakage

-

-

± 100

nA

Zero gate voltage drain current

-

-

25

μA

-

-

250

Drain-source on-state resistance

--

0.55

Ω

Forward transconductance

3.0

-

-

S

Dynamic

Input capacitance

f = 1.0 MHz, see fig. 5

-

1100

-

pF

Output capacitance

-190

-

Reverse transfer capacitance

-18

-

Total gate charge

--

39

nC

Gate-source charge

--

10

Gate-drain charge

--

19

Turn-on delay time

-11

-

ns

Rise time

-31

-

Turn-off delay time

-25

-

Fall time

-20

-

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal source inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

10

A

--

32

Body diode voltage

--

2.0

V

Body diode reverse recovery time

-

380

570

ns

Body diode reverse recovery charge

-

2.8

4.2

μC

Forward turn-on time

D

S

G

S

D

G