SI7812DN datasheet(2/14 Pages) VISHAY

2 / 14 page

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Document Number: 73332

S-83050-Rev. D, 29-Dec-08

Vishay Siliconix

Si7812DN

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 81 °C/W.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

≤ 10 s

RthJA

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.9

2.4

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 6.4

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.0

3.0

VDS = VGS, ID = 5 mA

2.3

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 75 V, VGS = 0 V

µA

VDS = 75 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 7.2 A

0.031

0.037

VGS = 4.5 V, ID = 6.4 A

0.038

0.046

Forward Transconductancea

gfs

VDS = 15 V, ID = 7.2 A

Dynamicb

Input Capacitance

Ciss

VDS = 35 V, VGS = 0 V, f = 1 MHz

840

Output Capacitance

Coss

110

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = 38 V, VGS = 10 V, ID = 7.2 A

VDS = 38 V, VGS = 4.5 V, ID = 7.2 A

812

Gate-Source Charge

Qgs

2.8

Gate-Drain Charge

Qgd

3.6

Gate Resistance

f = 1 MHz

Turn-On Delay Time

td(on)

VDD = 38 V, RL = 6.7 Ω

ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω

Rise Time

130

200

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

VDD = 38 V, RL = 6.7 Ω

ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

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