IRFP17N50LPBF datasheet(2/11 Pages) VISHAY

2 / 11 page

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Document Number: 91205

S11-0446-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP17N50L, SiHFP17N50L

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

c. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising fom 0 % to 80 % VDS.

COSS eff. (ER) is a fixed capacitance that stores the same energy as COSS while VDS is rising fom 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

-0.56

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mAd

-0.60

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

3.0

5.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

2.0

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 9.9 Ab

0.28

0.32

Forward Transconductance

gfs

VDS = 50 V, ID = 9.9 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

2760

Output Capacitance

Coss

325

Reverse Transfer Capacitance

Crss

-37

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V , f = 1.0 MHz

3690

VDS = 400 V , f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 V

159

Effective Output Capacitance

(Energy Related)

Coss eff. (ER)

120

Internal Gate Resistance

f = 1 MHz, open drain

1.4

Total Gate Charge

VGS = 10 V

ID = 16 A, VDS = 400 V

see fig. 7 and 15b

130

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 16 A

RG = 7.5

Ω, VGS = 10 V

see fig. 14a and 14bb

-21

Rise Time

-51

Turn-Off Delay Time

td(off)

-50

Fall Time

-28

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 16 A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C

IF = 16 A,

dI/dt = 100 A/μsb

170

250

TJ = 125 °C

220

330

Body Diode Reverse Recovery Charge

Qrr

TJ = 25 °C

470

710

μC

TJ = 125 °C

810

1210

Reverse Recovery Current

IRRM

TJ = 25 °C

7.3

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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