IRFPC60 datasheet(2/11 Pages) VISHAY

2 / 11 page

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Document Number: 91245

S11-0442-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPC60, SiHFPC60

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

Maximum Junction-to-Case (Drain)

RthJC

-0.45

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

600

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

-830

mV/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

100

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 9.6 Ab

0.40

Forward Transconductance

gfs

VDS = 50 V, ID = 9.6 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-3900

Output Capacitance

Coss

-440

Reverse Transfer Capacitance

Crss

-98

Total Gate Charge

VGS = 10 V

ID = 16 A, VDS = 360 V,

see fig. 6 and 13b

210

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

110

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 16 A,

Rg = 4.5

Ω, RD= 18 Ω

see fig. 10b

-19

Rise Time

-54

Turn-Off Delay Time

td(off)

-110

Fall Time

-56

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0

Internal Source Inductance

-13

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 16 A, VGS = 0 Vb

1.8

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 16 A,

dI/dt = 100 A/μsb

610

920

Body Diode Reverse Recovery Charge

Qrr

-6.6

9.9

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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