Document Number: 91244

www.vishay.com

S11-0443-Rev. B, 14-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFPC60LC, SiHFPC60LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFETs technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of Power MOSFETs offer the

designer a new standart in power transistors for switching

applications.

The

TO-247AC

package

is

preferred

for

commercial-industrial applications where higher power levels

preclude the use of TO-220AB devices. The TO-247AC is

similar but superior to the earlier TO-218 package because of

its isolated mounting hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

600

0.40

120

29

48

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFPC60LCPbF

SiHFPC60LC-E3

SnPb

IRFPC60LC

SiHFPC60LC

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

Continuous Drain Current

16

A

10

64

Linear Derating Factor

2.2

W/°C

1000

mJ

16

A

28

mJ

Maximum Power Dissipation

280

W

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply