e

EPAD

TM

®

N A

B L

E D

E

ORDERING INFORMATION

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

MATCHED PAIR MOSFET ARRAY

ALD110814/ALD110914

GENERAL DESCRIPTION

ALD110814/ALD110914 are monolithic quad/dual N-Channel MOSFETs

matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

The ALD110814/ALD110914 MOSFETs are designed and built with ex-

ceptional device electrical characteristics matching. Since these devices

are on the same monolithic chip, they also exhibit excellent tempco track-

ing characteristics. Each device is versatile as a circuit element and is a

useful design component for a broad range of analog applications. They

are basic building blocks for current sources, differential amplifier input

stages, transmission gates, and multiplexer applications. For most appli-

cations, connect V- and N/C pins to the most negative voltage potential in

the system and V+ pin to the most positive voltage potential (or left open

unused). All other pins must have voltages within these voltage limits.

The ALD110814/ALD110914 devices are built for minimum offset voltage

and differential thermal response, and they are designed for switching

and amplifying applications in +1.5V to +10V systems where low input

bias current, low input capacitance and fast switching speed are desired.

Since these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment.

The ALD110814/ALD110914 are suitable for use in precision applications

which require very high current gain, beta, such as current mirrors and

current sources. The high input impedance and the high DC current gain

of the Field Effect Transistors result in extremely low current loss through

the control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example, DC

beta of the device at a drain current of 3mA and input leakage current of

30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +1.4V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Parallel connection of MOSFETs to increase drain currents

• Low input capacitance

• High input impedance — 10

• DC current gain >10

8

• Low input and output leakage currents

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin

16-Pin

8-Pin

8Pin

Plastic Dip

SOIC

Plastic Dip

SOIC

Package

Package

Package

Package

ALD110814PC

ALD110814SC

ALD110914PA

ALD110914SA

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stages

• Discrete voltage comparators

• Voltage bias circuits

• Sample and Hold circuits

• Analog inverters

• Level shifters

• Source followers and buffers

• Current multipliers

• Discrete analog multiplexers/matrices

• Discrete analog switches

N/C*

1

2

3

14

15

16

4

13

5

12

N/C*

6

7

8

10

11

N/C*

N/C*

9

ALD110814

M 4

M 3

M 1

M 2

V-

N/C*

ALD110914

1

2

3

6

7

8

4

5

M 1

M 2

V-

N/C*

V-

V-

Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286

www.aldinc.com

*N/C pins are internally connected.

Connect to V- to reduce noise