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ALD114804SC Datasheet(PDF) 2 Page - Advanced Linear Devices

Part # ALD114804SC
Description  QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
PDF  2 Pages
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

ALD114804SC Datasheet(HTML) 2 Page - Advanced Linear Devices

  ALD114804SC Datasheet HTML 1Page - Advanced Linear Devices ALD114804SC Datasheet HTML 2Page - Advanced Linear Devices  
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ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
2
Notes:
1
Consists of junction leakage currents
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
10.6V
Gate-Source voltage, VGS
10.6V
Power dissipation
500 mW
Operating temperature range PA, SA, PC, SC package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
ALD114808A / ALD114908A
ALD110848 / ALD114908
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test Condition
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V
TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Gate Threshold Voltage
VGS(th)
-0.42
-0.40
-0.38
-0.44
-0.40
-0.36
V
IDS =1µA
VDS = 0.1V
Offset Voltage
VOS
25
7
20
mV
IDS =1µA
VGS1-VGS2
VGS1-VGS2 Tempco
∆VOS
55
µV/ °CVDS1 = VDS2
GateThreshold Tempco
∆VGS(th)
-1.7
-1.7
mV/ °CID = 1µA
0.0
0.0
ID = 20µA, VDS = 0.1V
+1.6
+1.6
ID = 40µA
On Drain Current
IDS (ON)
12.0
12.0
mA
VGS = +9.1V
3.0
3.0
VGS = +3.6V
VDS = +5V
Forward Transconductance
GFS
1.4
1.4
mmho
VGS =+3.6 V
VDS = +8.6V
Transconductance Mismatch
∆GFS
1.8
1.8
%
Output Conductance
GOS
68
68
µmho
VGS =+3.6V
VDS = +8.6V
Drain Source On Resistance
RDS (ON)
500
500
Ω
VDS = 0.1V
VGS = +3.6V
Drain Source On Resistance
RDS (ON)
5.4
5.4
KΩ
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
∆RDS (ON)
10
10
%
Tolerance
Drain Source On Resistance
∆RDS (ON)
0.5
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
10
V
IDS = 1.0µA
Voltage
VGS = -1.4V
Drain Source Leakage Current1
IDS (OFF)
10
100
10
100
pA
VGS = -1.4V, VDS =+5V
44
nA
TA = 125°C
Gate Leakage Current1
IGSS
330
3
30
pA
VDS = 0V VGS = +10V
11
nA
TA =125°C
Input Capacitance
CISS
2.5
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
0.1
pF
Turn-on Delay Time
ton
10
10
ns
V+ = 5V RL= 5KΩ
Turn-off Delay Time
toff
10
10
ns
V+ = 5V RL= 5KΩ
Crosstalk
60
60
dB
f = 100KHz



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