CMD201

DC-20 GHz Distributed Power Amplifier

Data Sheet | December 22, 2021 | Subject to change without notice

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Applications Information

Assembly Guidelines

The backside of the CMD201 is RF ground. Die attach should be accomplished with electrically and thermally conductive

epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency

devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF

decoupling capacitors placed in close proximity to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil

thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require

a double bond wire as shown.

The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet. Do not make

contact directly with the die surface as this will damage the monolithic circuitry. Handle with care.

Assembly Diagram

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be

observed during handling, assembly and test.

0.1 uF CAP TO GROUND

To Vgg1

0.1 uF CAP TO GROUND

100 pF CAP TO GROUND

100 pF BYPASS CAP

0.1 uF BYPASS CAP

100 pF CAP TO GROUND

0.1 uF BYPASS CAP

100 pF BYPASS CAP

To Vgg2

To Vdd

RF out

RF in

(example: Presidio part

MVB4080X104ZGK5R3L)

(example: Presidio part

LSA1515B101M2H5R-L)