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SJ6006DS2TP Datasheet(PDF) 2 Page - Littelfuse |
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SJ6006DS2TP Datasheet(HTML) 2 Page - Littelfuse |
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2 / 9 page ![]() Revised: 07/31/17 Specifications are subject to change without notice. ©2017 Littelfuse, Inc Thyristors 6 Amp High Temperature Sensitive & Standard SCRs SJxx06xSx & SJxx06xx Series Absolute Maximum Ratings — Standard SCRs Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 125°C 6 A I T(AV) Average on-state current T C = 125°C 3.84 A I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; T J (initial) = 25°C 83 A single half cycle; f = 60Hz; T J (initial) = 25°C 100 I2t I2t Value for fusing t p = 8.3 ms 41 A2s di/dt Critical rate-of-rise of on-state current f = 60Hz T J = 150°C 100 A/μs I GM Peak gate current Pw=20μs, T J = 150°C 0.5 A P G(AV) Average gate power dissipation T J = 150°C 0.1 W T stg Storage temperature range -40 to 150 °C T J Operating junction temperature range -40 to 150 °C V DSM/VRSM Peak non-repetitive blocking voltage Pw=100μs V DRM/VRRM+100 V Absolute Maximum Ratings — Sensitive SCRs Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 120°C 6 A I T(AV) Average on-state current T C = 120°C 3.84 A I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; T J (initial) = 25°C 83 A single half cycle; f = 60Hz; T J (initial) = 25°C 100 I2t I2t Value for fusing t p = 8.3ms 41 A2s di/dt Critical rate of rise of on-state current f = 60Hz, T J = 150°C 70 A/μs I GM Peak gate current Pw=20μs, T J = 150°C 0.5 A P G(AV) Average gate power dissipation T J = 150 °C 0.1 W T stg Storage temperature range -40 to 150 °C T J Operating junction temperature range -40 to 150 °C V DSM/VRSM Peak non-repetitive blocking voltage Pw=100μs V DRM/VRRM+100 V Electrical Characteristics (T J = 25°C, unless otherwise specified) – Sensitive SCRs Symbol Test Conditions Value Unit SJxx06xS2 I GT V D = 6V, RL = 100Ω MIN. 20 μA MAX. 200 μA V GT MAX. 0.8 V dv/dt V D = VDRM; RGK = 220Ω ; TJ = 125°C MIN. 15 V/μs V GD V D = VDRM; RL = 3.3kΩ; TJ = 125°C MIN. 0.2 V V D = VDRM; RL = 3.3kΩ; TJ = 150°C MIN. 0.1 V V GRM I GR = 10μA MIN. 6 V I H I T = 20mA (initial) MAX. 6 mA t q t p=50µs; dv/dt=5V/µs; di/dt=-30A/µs MAX. 130 μs t gt I G = 2 x IGT; PW = 15µs; IT = 8A TYP. 6 μs NOTE: xx = voltage |
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