QPD1009

15W, 50V, DC

– 4 GHz, GaN RF Transistor

Rev. F

- 2 of 28 -

Disclaimer: Subject to change without notice

© 2019 Qorvo

www.qorvo.com

Parameter

Rating

Units

+145

V

-7 to +2

V

1600

mA

See page 4.

mA

16

W

RF Input Power at 2 GHz

, CW, 50 Ω, T = 25 °C

+27

dBm

Mounting Temperature (30 Seconds)

°C

Storage Temperature

−40 to +150

°C

Notes:

1.

. Operation of this device outside the parameter ranges given above may cause permanent damage.

Parameter

Min

Typ

Max

Units

Operating Temp. Range

−40

+25

+85

 °C

+12

+50

+60

V

–

26

–

mA

–

700

–

mA

–

−2.8

–

V

–

–

14.4

W

–

–

17.5

W

Notes:

over all recommended operating conditions.