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STL45N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL45N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Figure 7. Capacitance variations GADG250720171026CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Normalized gate threshold voltage vs temperature GADG200720171435VTH 1.1 1 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj ( °C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GADG200720171435RON 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 RDS(on) (norm.) Tj ( °C) VGS = 10 V Figure 10. Normalized V(BR)DSS vs temperature GADG200720171436BDV 1.08 1.04 1 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) Tj ( °C) ID = 1 mA Figure 11. Source-drain diode forward characteristics GADG220120190926SDF 1.05 0.95 0.85 0.75 0.65 0.55 0 5 10 15 20 25 VSD (V) ISD (A) TJ = -50 °C TJ = 25 °C TJ = 150 °C Figure 12. Output capacitance stored energy GADG200720171522CSE 20 16 12 8 4 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) STL45N60DM6 Electrical characteristics (curves) DS11670 - Rev 5 page 6/14 |
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