STPS3150 datasheet(4/16 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

PF(AV)(W)

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(AV)(A)

= 0.05

= 0.2

= 0.1

= 0.

= 1

=tp/T

Figure 2. Average forward current versus ambient

temperature (δ = 0.5)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

5 0

7 5

100

125

150

17 5

IF(AV)(A)

Rth(j-a)=Rth(j-l)

SMB-Flat

DO-201AD

SMB

Tamb (°C)

=tp/T

SMA-Flat Notch,

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Zth(j-a)/Rth(j-a)

tp(s)

SMB

Single pulse

Figure 5. Relative variation of thermal impedance junction

to lead versus pulse duration (SMB flat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Zth(j-l)/Rth(j-l)

SMBflat

tp(s)

Single pulse

Figure 6. Relative variation of thermal impedance junction

to ambient versus pulse duration (DO-201AD)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Zth(j-a)/Rth(j-a)

tp(s)

DO-201AD

Single pulse

STPS3150

Characteristics (curves)

DS3283 - Rev 7

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