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STTH15RQ06 Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH15RQ06 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 17 page ![]() Figure 11. Junction capacitance versus reverse voltage applied (typical values) 1 10 100 1000 10 100 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25°C VR(V) Figure 12. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35 μm) (D²PAK and D²PAK HV) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 SCu(cm²) Rth(j-a) (°C/W) Figure 13. Relative variation of non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 tp(ms) IFSM(tp) / IFSM(10 ms) Figure 14. Relative variation of non-repetitive peak surge forward current versus initial junction temperature (sinusoidal waveform) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 175 Tj(°C) IFSM(Tj) / IFSM(25 °C) STTH15RQ06 Characteristics (curves) DS12162 - Rev 2 page 5/17 |
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