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50C02SS Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 50C02SS
Description  Low-Frequency General-Purpose Amplifier Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

50C02SS Datasheet(HTML) 2 Page - Sanyo Semicon Device

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50C02SS
No.7519-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
2.8
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA
50
100
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
5V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
340
ns
Fall Time
tf
See specified Test Circuit.
55
ns
Switching Time Test Circuit
VR
RB
VCC=25V
VBE= --5V
++
50
Ω
INPUT
OUTPUT
RL
220
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=200mA
hFE -- IC
IT05108
IC -- VCE
IT05106
IC -- VBE
IT05107
Collector-to-Emitter Voltage, VCE -- mV
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
1.0
10
100
1000
3
25
7
3
25
7
3
25
7
1000
100
10
2
3
5
7
2
3
5
7
0
0
350
400
300
200
250
500
450
200
150
100
50
0
200
300
600
500
400
100
500
1000
800
900
100
300
400
600
700
0
0.2
0.4
0.6
0.8
1.2
1.0
VCE=2V
VCE=2V
IB=0
200
µA
600µA
1mA
2mA
3mA
5mA
7mA
8mA
10mA
Ta=75
°C
25
°C
--25
°C
IT05411
1.0
23
5
10
100
72
3
5 7
1000
23
5
7
2
5
7
5
7
3
2
100
3
10
25
°C
IC / IB=10
VCE(sat) -- IC
Collector Current, IC -- mA



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