DB3 datasheet(1/1 Pages) EIC

Part #	DB3

Description	SILICON BI-DIRECTIONAL DIACS

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	EIC [EIC discrete Semiconductors]

Direct Link	http://www.eicsemi.com

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1 / 1 page

DB3, DB4

SILICON BI-DIRECTIONAL DIACS

VBR : 32 - 40 Volts

FEATURES :

* VBR : 32 V and 40 V

* Low breakover current

* Pb / RoHS Free

MECHANICAL DATA :

* Case:

DO-35 Glass Case

* Weight:

approx. 0.11g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C)

SYMBOL

UNIT

Minimum Breakover Voltage

VBR1 and VBR2 (Min.)

V

Typical Breakover Voltage

VBR1 and VBR2 (Typ.)

V

Maximum Breakover Voltage

VBR1 and VBR2 (Max.)

V

Maximum Breakover Current

I(BR)1 and I(BR)2

200

μA

Maximum Breakover Voltage Symmetry

[V(BR)1] - [V(BR)2]

3.8

V

Minimum Dynamic Breakback Voltage

∆I = [IBR to IF = 10 mA]

Maximum Peak Current at Ta = 50 °C

(10 μs duration, 120 cycle repetition rate)

Maximum Peak output Voltage at Ta = 50 °C **

eP

±3

V

Thermal Impedance Junction to Ambient

RӨJA

60

°C/W

Operating Junction Temperature Range

TJ

- 40 to + 100

°C

Storage Temperature Range

TSTG

- 40 to + 150

°C

Page 1 of 1

Rev. 03: December 7, 2006

|

ΔV ± |

5.0

V

IP

±2

A

32

40

36

45

RATING

DB3

DB4

28

35

DO - 35 Glass

(DO-204AH)

0.079(2.0 )max.

0.150 (3.8)

max.

0.020 (0.52)max.

Dimensions in inches and ( millimeters )

1.00 (25.4)

min.

1.00 (25.4)

min.

**CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST

www.eicsemi.com

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