IRFR014TRPBFA datasheet(2/13 Pages) VISHAY

2 / 13 page

IRFR014, IRFU014, SiHFR014, SiHFU014

www.vishay.com

Vishay Siliconix

S21-0466-Rev. F, 17-May-2021

Document Number: 91263

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

110

°C/W

Maximum junction-to-ambient (PCB mount) a

RthJA

Maximum junction-to-case (drain)

RthJC

5.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.068

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-source leakage

IGSS

VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 4.6 A b

0.20

Forward transconductance

gfs

VDS = 25 V, ID = 4.6 A

2.4

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

300

Output capacitance

Coss

160

Reverse transfer capacitance

Crss

-29

Total gate charge

VGS = 10 V

ID = 10 A, VDS = 48 V,

see fig. 6 and 13 b

Gate-source charge

Qgs

3.1

Gate-drain charge

Qgd

5.8

Turn-on delay time

td(on)

VDD = 30 V, ID = 10 A,

Rg = 24

Ω, RD = 2.7 Ω, see fig. 10 b

-10

Rise time

-50

Turn-off delay time

td(off)

-13

Fall time

-19

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center

of die contactc

-4.5

Internal source inductance

-7.5

Drain-source body diode characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

7.7

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 7.7 A, VGS = 0 V b

1.6

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b

140

Body diode reverse recovery charge

Qrr

0.20

0.40

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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