IRFR310, IRFU310, SiHFR310, SiHFU310

www.vishay.com

Vishay Siliconix

S21-0771-Rev. E, 19-Jul-2021

1

Document Number: 91272

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface-mount (IRFR310, SiHFR310)

• Straight lead (IRFU310, SiHFU310)

• Available in tape and reel

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

e. When mounted on 1” square PCB (FR-4 or G-10 material)

PRODUCT SUMMARY

400

3.6

12

1.9

6.5

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

G

D S

S

D

G

D

Available

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and halogen-free

SiHFR310-GE3

SiHFR310TRL-GE3

SiHFR310TR-GE3

SiHFU310-GE3

SiHFR310TRR-GE3

IRFR310TRPbF-BE3

IRFR310TRLPbF-BE3

-

Lead (Pb)-free

IRFR310PbF

IRFU310PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

400

V

Gate-source voltage

± 20

Continuous drain current

1.7

A

1.1

6.0

Linear derating factor

0.20

W/°C

0.020

86

mJ

1.7

A

2.5

mJ

Maximum power dissipation

25

W

2.5

dV/dt

4.0

V/ns

Operating junction and storage temperature range

-55 to +150

°C

For 10 s

260