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MR2540 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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MR2540 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 1 page ![]() MR2540 AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR VR : 20 Volts Io : 6 Amperes FEATURES : * Breakdown Voltage 24 to 32 Volts * High Power capability * Increased Capacity by Parallel Operation * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Terminal are readily solderable * Polarity : Cathode polarity band * Mounting position : Any * Weight : 1.624 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Maximum DC Peak Repetitive Reverse Voltage VRRM 20 V Maximum Working Peak Reverse Voltage VRWM 20 V Maximum DC Blocking Voltage VR 20 V Maximum Breakdown Voltage ( IR = 100 mA, Tc = 25 °C ) (1) VBR(max) 32 V Minimum Breakdown Voltage ( IR = 100 mA, Tc = 25 °C ) (1) VBR(min) 24 V Maximum Average Rectified Forward Current ( Single Phase, Resistive Load, 60 Hz, Tc = 150 °C ) Maximum Repetitive Peak Reverse Surge Current ( Time Constant = 10 ms, Duty Cycle ≤ 1%, Tc = 25 °C ) Maximum Non-Repetitive Peak Surge Current Surge Supplied at Rated Load Conditions, Halfwave, Single Phase Maximum Instantaneous Forward Voltage (IF = 100 A, Tc = 25 °C) (1) VF 1.1 V Maximum Reverse Current ( VR = 20 V, Tc = 25 °C ) IR 200 nA Typical Breakdown Voltage Temperature Coefficient V(BR)TC 0.096 %/°C Typical Forward Voltage Temperature Coefficient @ IF = 10 mA VFTC 2.0 mV/°C Typical Thermal Resistance Junction to Case RӨJC 0.8 °C/W Operating Junction and Storage Temperature Range TJ, TSTG - 65 to + 175 °C Note : (1) Pulse Test : Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Page 1 of 1 Rev. 04 : April 1, 2008 RATING A 800 IFSM IRSM IF(AV) 6 85 A A Dimensions in inches and ( millimeters ) 0.342 (8.69) 0.332 (8.43) 0.175 (4.45) 0.165 (4.19) 0.246 (6.25) 0.234 (5.94) 0.222 (5.64) 0.218 (5.54) 5° NOM MR |
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