SIR608DP datasheet(2/9 Pages) VISHAY

2 / 9 page

SiR608DP

www.vishay.com

Vishay Siliconix

S18-0952-Rev. A, 17-Sep-2018

Document Number: 76807

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

VDS temperature coefficient

V

DS/TJ

ID = 10 mA

mV/°C

VGS(th) temperature coefficient

V

GS(th)/TJ

ID = 250 μA

-5.8

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.1

2.3

Gate-source leakage

IGSS

VDS = 0 V, VGS = +20, -16 V

± 100

Zero gate voltage drain current

IDSS

VDS = 45 V, VGS = 0 V

μA

VDS = 45 V, VGS = 0 V, TJ = 55 °C

On-state drain current a

ID(on)

VDS  5 V, VGS = 10 V

Drain-source on-state resistance a

RDS(on)

VGS = 10 V, ID = 20 A

0.00100

0.00120



VGS = 4.5 V, ID = 20 A

0.00136

0.00180

Forward transconductance a

gfs

VDS = 10 V, ID = 20 A

120

Dynamic b

Input capacitance

Ciss

VDS = 20 V, VGS = 0 V, f = 1 MHz

8900

Output capacitance

Coss

1244

Reverse transfer capacitance

Crss

120

Crss/Ciss ratio

0.0135

0.0270

Total gate charge

VDS = 20 V, VGS = 10 V, ID = 20 A

111

167

VDS = 20 V, VGS = 4.5 V, ID = 20 A

-50.5

Gate-source charge

Qgs

-26

Gate-drain charge

Qgd

-7.8

Output charge

Qoss

VDS = 20 V, VGS = 0 V

Gate resistance

f = 1 MHz

0.3

0.88

1.5



Turn-on delay time

td(on)

VDD = 20 V, RL = 1 

ID  20 A, VGEN = 10 V, Rg = 1 

-19

Rise time

-10

Turn-off delay time

td(off)

-50

100

Fall time

-8

Turn-on delay time

td(on)

VDD = 20 V, RL = 1 

ID  20 A, VGEN = 4.5 V, Rg = 1 

-52

104

Rise time

-86

172

Turn-off delay time

td(off)

-50

100

Fall time

-25

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

TC = 25 °C

94.5

Pulse diode forward current (tp = 100 μs)

ISM

400

Body diode voltage

VSD

IS = 10 A

0.7

1.1

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs,

TJ = 25 °C

104

Body diode reverse recovery charge

Qrr

142

Reverse recovery fall time

-32

Reverse recovery rise time

-20

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